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Optimization of nucleation and growth parameters for large-scale MoS<sub>2</sub> thin films using chemical vapor deposition: A case study

ORAL

Abstract

The semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) have demonstrated promising applications in electronics, optoelectronics, photonics, etc. Molybdenum disulfide (MoS2) is one of the most explored 2D-TMDs due to its intriguing features and potential for emergent electronics. Apart from that, the valley-related physics in monolayer MoS2 made it a hot topic of current research. However, the synthesis of defect-free large-scale monolayer MoS2 with minimal cost is still challenging. Herein, the nucleation and growth of monolayer MoS2 on two different substrates (SiO2/Si, mica) via low-pressure chemical vapor deposition is reported. The distance between the precursors (MoO3/S) and the substrate is also studied for optimal growth. Further, the substrate surface treatment with different agents, like ammonia and other alkali salts, has shown promising results for scaling up monolayer MoS2 films.

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Presenters

  • Vivek Chaudhary

    Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid, Ben Guerir 43150, Morocco

Authors

  • Vivek Chaudhary

    Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid, Ben Guerir 43150, Morocco

  • Mohammed El Hammoumi

    Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid, Ben Guerir 43150, Morocco

  • Afaf Yaden

    Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid, Ben Guerir 43150, Morocco

  • Ghassane Tiouitchi

    Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid, Ben Guerir 43150, Morocco

  • Nour Alem

    Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid, Ben Guerir 43150, Morocco

  • Petr Neugebauer

    brno university of Technology, CEITEC, Central European Institute of Technology, CEITEC BUT, Purkynova 656/123, Brno 61200, Czech Republic, Central European Institute of Technology, CEITEC, Brno University of Technology

  • Abdelouahed El Fatimy

    Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid, Ben Guerir 43150, Morocco