Intrinsic spin-orbit torque-induced magnetic switching in a moiré Chern magnet

Spin-transfer torques and spin-orbit torques (SOT) are two well-developed techniques for generating magnetic memories in which magnetic structure is controlled by applied electrical currents. Both methods utilize multilayer device geometries in which electrically actuated spin currents in one layer drive the switching of a magnetic ground state in the other. Here, we present an intrinsic spin-orbit torque-induced magnetic memory arising in a single two dimensional layer from the interplay of spontaneous magnetism and Berry curvature. We study AB-stacked MoTe2/WSe2, which supports a Chern magnet state and shows current-driven hysteretic switching of its resistance above a threshold current [1]. Using a nanoscale superconducting quantum interference (nanoSQUID-on-tip) device, we establish that the switching observed in transport is the direct consequence of magnetic domain reversals occurring through an intrinsic analog of a SOT mechanism. The lack of an internal material interface and the presence of high fidelity current-to-spin conversion let this system achieve record switching current density of 10^3 A/cm^2.

[1] CL Tschirhart, E Redekop et al - arXiv preprint arXiv:2205.02823 (2022).