Floquet engineering of energy bandgaps and titled states in 1T'-MoS₂ using circularly polarized dressing field

We have investigated the low-energy electronic states in 1T'-MoS₂ in the presence of a high-frequency off-resonance dressing field with circular polarization. Our results include the derivation of a set of closed-form analytical expressions for the energy dispersion relations of the obtained dressed states, as well as an analysis of the modification of their bad gaps and tilting due to the presence of the external electromagnetic field. In particular, we have found that in contrast to all previously analyzed Dirac materials, the effect of circularly polarized light is not simply creating or an increase of the existing band gap. This type of dressing field is also known for a transition into a new electronic state with broken time-reversal symmetry and a finite Chern number.