Electrical characterization of Graphene Oxide films in Field Effect Transistor configuration

Electrical characterization of pyrolytic Graphene Oxide (GO) films (5.3% of oxidation), in configuration of field effect transistor (FET), is presented here. GO-FET´s were electrically characterized by the current-voltage method, varying temperature of 20 to 300 K; finding, a behavior of voltage-controlled current source and a high electrical mobility value of 1.2 x10 4 cm 2 /Vs at 300 K, as expected. Results revealed that decreases temperature, increases the electrical resistance and this behavior was described employing the 3D-VRH model. These results suggest that GO-FET is an attractive device to high-frequency commutation.