Magnetic Field Induced Transitions in Spin-1 Antiferromagnet NiNb<sub>2</sub>O<sub>6</sub>
ORAL
Abstract
Recent observations of quantum critical excitations (QCE) in columbite systems such as NiNb2O6 and CoNb2O6 have brought great attention to the field of Quantum Materials so that QCE can be realized for T > 0 K. [1,2]. Here we present detailed studies of magnetic field induced transitions in NiNb2O6 mapped on the field-temperature (H-T) phase diagram. The crystal structure analysis of the prepared sample of NiNb2O6 using X-ray diffraction and Rietveld refinement reveals orthorhombic crystal structure of space group is Pbcn (D2h14) with lattice parameters a = 14.038(3) Å, b = 5.684(3) Å and c = 5.025(3) Å. The unit cell essentially consists of layers of Ni–Nb–Nb–Ni–Nb–Nb–Ni with slightly distorted hexagonal-closed-packed oxygen octahedra perpendicular to the a-axis. Low-temperature magnetic susceptibility (χ-T) measurements reveal antiferromagnetic (AFM) behavior below the Néel temperature TN ~ 5.8 K along with two field induced transitions at HC1 ~ 9.7 kOe and HC2 ~ 27.8 kOe. The best fits of χ vs. T data for T > 40 K to modified Curie-Weiss law χ = χ0 + C/(T-θ) with χ0 = -2.3 × 10-4 emu mol-1 Oe-1 yield θ = +11 K, and C = 1.36 emu K mol-1 Oe-1, the latter yielding the effective magnetic moment µ = 3.3 µB /Ni2+ ion confirming the effective spin S = 1 and g = 2.3, and the principal exchange interaction J0 being ferromagnetic as in CoNb2O6 [3]. The H-T phase diagram mapped using the M-H isotherms and χ -T data at different fields will be discussed along with the intra-chain (J0) and inter-chain (J1 and J2) exchange interactions determined from HC1 and HC2.
References:
[1] Y. Xu, et al. Phys. Rev. X 12, 021020 (2022)
[2] T. Liang et al. Nat. Commun. 6, 7611 (2015)
[3] S. Thota et al., Phys. Rev. B 103, 064415 (2021)
References:
[1] Y. Xu, et al. Phys. Rev. X 12, 021020 (2022)
[2] T. Liang et al. Nat. Commun. 6, 7611 (2015)
[3] S. Thota et al., Phys. Rev. B 103, 064415 (2021)
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Presenters
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Subhash Thota
Indian Institute of Technology Guwahati
Authors
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Subhash Thota
Indian Institute of Technology Guwahati
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Maruthi R
Indian Institute of Technology Guwahati