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Itinerant spin polaron and magnetic states in semiconductor moiré superlattices

ORAL

Abstract

We study the instability of the ferromagnetic ground state of moiré TMD heterobilayers in magnetic field, which we model by the Hubbard model on triangular lattice. In strong interaction regime, we find a drastic difference between the charge e and -e excitations of the spin-polarized Mott insulator occurring in a wide range of magnetic fields below the saturation field hs~t>>J. In the limit U = inf, we find an exact solution for a hole spin polaron which leads to a magnetic instability at h~t. The hole spin polaron is an itinerant bound state of a spin flip and a hole in a fully polarized background, which has spin-3/2 and binding energy εb~t and forms due to a purely kinetic origin. The charge-e excitation is simply a doublon. The saturation field hs~ t for finite hole doping is much larger than that for electron doping, where hs~J<at small electron doping and decreases further due to the emergence metallic magnetism. We propose experimental signatures which will allow to unambiguously reveal the presence of the hole spin polaron physics and address the existing observations.

Publication: Davydova, M., Zhang, Y., Fu, L. (2022). Itinerant spin polaron and metallic ferromagnetism in semiconductor moiré superlattices. arXiv preprint arXiv:2206.01221.

Presenters

  • Margarita Davydova

    Massachusetts Institute of Technology (MIT)

Authors

  • Margarita Davydova

    Massachusetts Institute of Technology (MIT)

  • Yang Zhang

    MIT, Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA, Massachusetts Institute of Technology, Massachusetts Institute of Technology MIT

  • Liang Fu

    Massachusetts Institute of Technology MIT, Massachusetts Institute of Technology