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Strain tuning of V<sub>Si</sub> in SiC via waveguide bending

POSTER

Abstract

Photonic interference is a proven pathway to scale up quantum systems [1]. Interference requires indistinguishable photon emission of multiple emitters, which can – in principle - be accomplished using Stark shift tuning. To avoid crosstalk between multiple devices on a single chip, we propose to use strain tuning for compensation.

Here, we show our work on shifting the resonant wavelength of silicon vacancy centers in bulky triangular silicon carbide waveguides. In particular, we mechanically bend these waveguides to induce stress in the surrounding area of the color centers.

We obtain the strain tuning coefficients of VSi centers in SiC, which pave the way for emission wavelength tuning in quantum networks based on photonic interference. Additionally, our measurements give guidelines for phonon-photon-spin-related coupling experiments.

References: [1] M. Pompili et al., Science 372, 259–264 (2021)

Presenters

  • Timo Steidl

    3rd Institute of Physics, University of Stuttgart

Authors

  • Timo Steidl

    3rd Institute of Physics, University of Stuttgart

  • Marcel Krumrein

    3rd Institute of Physics, University of Stuttgart

  • Di Liu

    3rd Institute of Physics, University of Stuttgart

  • Petr Siyushev

    3rd Institute of Physics, University of Stuttgart

  • Roman Kolesov

    University of Stuttgart, 3rd Institute of Physics, University of Stuttgart

  • Rainer Stöhr

    University of Stuttgart, 3rd Institute of Physics, University of Stuttgart

  • Jawad Ul-Hassan

    Linköping University

  • Florian Kaiser

    Luxembourg Institute of Science and Technology

  • Jörg Wrachtrup

    University of Stuttgart, 3rd Institute of Physics, University of Stuttgart