Volatile resistive switching of LiPON/Metal-oxide heterostructure

Memristor or resistive switching memory (ReRAM) based on binary metal-oxide has been shown to be promising in the field of neuromorphic computing due to its non-volatile resistive switching behavior and CMOS compatibility. However, large operation current independent of device area limits its integration with transistors, as lower drive current is provided with transistor size shrinking down. Compared to conventional non-volatile memristor, metal-oxide based volatile memristor shows advantages in lower operating current and area dependence due to its interface-driven nature. In this work, LiPON/Metal-oxide heterostructure is fabricated to explore the influence of Li ion on the volatile switching behavior of metal-oxide memristor. It is found that intercalation of Li ions increases concentration of defects at metal-oxide interface as well as the mobility of ion migration, which improves the switching speed and volatile ON/OFF ratio. Temperature dependence test is conducted to evaluate dynamics of ion motion, corresponding model is also proposed.