Discrete trap-related Bulk-limited Conduction in Solid

Herein, we propose a trap-related charge conduction model analytically describing the bulk-limited transport by re-interpreting the generation and recombination behavior modelled by the Shockley-Read-Hall (SRH) process. When the conduction mechanism is rather limited by trap states, the thermal velocities of the charge carriers in the SRH model can be replaced by their drift velocities for the drift-dominant condition. That is, the randomness of their motion (immediately after emission) can be treated with a "directional" motion along the applied field. The derived SRH-based trap-related conduction provides an intuitive yet rigorous analysis of the current densities considering both types of charge carriers. Our generalized model can thus be universally applicable to a range of electronic materials systems when occurring discrete trap-related conduction.