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Image antiferromagnetic order switching using a scanning single-spin microscope

ORAL

Abstract

Electrical switching of Néel order in an antiferromagnetic (AF) insulator is desirable as a basis for memory applications. Unlike electrically-driven switching of ferromagnetic order via spin-orbit torques, electrical switching of antiferromagnetic order remains poorly understood. Here we obtain nanoscale magnetic images of a canted AF, α-Fe2O3, using a home-built scanning nitrogen-vacancy (NV) center microscope. We study the change of the magnetic order of α-Fe2O3 induced by an external magnetic field and electric current. Our results show that the orientation of an in-plane 1-Tesla magnetic field influences the sample's magnetic state even after relaxation in a low field. We find that our sample has an overall in-plane uniaxial anisotropy, in contrast to the 3-fold magneto-crystalline anisotropy suggested in previous work. Our observations from the current-induced magnetic order switching experiment indicate that thermo-magnetoelastic effects alone are sufficient to induce magnetic switching in α-Fe2O3 and that spin-orbit torques may not be necessary.

Publication: Q. Guo, A. D'Addario, Y. Cheng, J. Kline, I. Gray, H. F. H. Cheung, F. Yang, K. C. Nowack, and G. D. Fuchs, "Current-induced switching of thin film a-Fe2O3 devices imaged using a scanning single-spin microscope," arXiv:2210.06233 (2022)

Presenters

  • Qiaochu Guo

    Cornell University

Authors

  • Qiaochu Guo

    Cornell University

  • Anthony D'Addario

    Cornell University

  • Yang Cheng

    Ohio State Univ - Columbus, University of California, Los Angeles

  • Jeremy Kline

    Cornell University

  • Isaiah Gray

    Cornell University

  • Harry Cheung

    Cornell University

  • Fengyuan Yang

    Ohio State Univ - Columbus

  • Katja C Nowack

    Cornell University

  • Gregory D Fuchs

    Cornell University