Ferroelectric III-nitride heterostructures and nanostructures

The incorporation of rare-earth elements such as scandium (Sc) can transform conventional III-nitride semiconductors to be ferroelectric. In this talk I will present recent advances of ferroelectric Sc-III-nitride heterostructures and nanostructures, including epitaxy, properties and emerging device applications. Molecular beam epitaxy and properties of ScAlN and ScGaN with a wide range of Sc compositions will be discussed. Special attention will be paid to the unique ferroelectric properties of these ultrawide bandgap semiconductors. The realization of ultrathin ferroelectric nitride heterostructures and the underlying physics and properties will be discussed, together with their applications in quantum photonics and electronics.