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Light-induced insulator-metal transition in Sr<sub>2</sub>IrO<sub>4</sub> reveals the nature of the insulating ground state

ORAL

Abstract

Proposed as a Jeff = 1/2 Mott insulator induced by strong spin-orbit coupling (SOC), Sr2IrO4 has been considered as an alternative material platform to explore the mechanism of high-Tc superconductivity, due to its structural and electronic similarities to high-Tc superconducting cuprates. While the Jeff = 1/2 ground state and the important role of SOC in the opening of the charge gap are experimentally confirmed, the Mott nature of the low-temperature insulating phase in Sr2IrO4 has not been firmly established. A Slater mechanism for the opening of the gap has been proposed in previous studies, but a general consensus has not been reached due to several counter evidences. Resolving this issue is however essential for understanding the similarities and differences between the cuprates and Sr2IrO4 and the fact that (high-Tc) superconductivity has not been observed in doped Sr2IrO4. Here, we report the observation of a gap-closing and the formation of weakly-renormalized electronic bands in the gap region as a result of a light-induced insulator-metal transition in Sr2IrO4, measured via time- and angle-resolved photoemission spectroscopy. Considering the typical temperature and doping evolution of Mott-gaps and Hubbard bands, we argue that these observations provide a clear evidence of the non-Mott nature of the insulating state. For the origin of the charge gap, we instead consider a correlated band insulator picture, where anti-ferromagnetic correlations play a key role in the opening of the gap.

Presenters

  • Dongsung Choi

    Massachusetts Institute of Technology MIT, Massachusetts Institute of Technology

Authors

  • Dongsung Choi

    Massachusetts Institute of Technology MIT, Massachusetts Institute of Technology

  • Doron Azoury

    Massachusetts Institute of Technology

  • Changming Yue

    Univ of Fribourg-Perolles

  • Jiyu Chen

    University of Fribourg

  • Francesco Petocchi

    Université de Fribourg, University of Fribourg

  • Zachary Porter

    University of California, Santa Barbara

  • Edoardo Baldini

    Massachusetts Institute of Technology

  • Baiqing Lyu

    Massachusetts Institute of Technology MIT, Massachusetts Institute of Technology

  • Masataka Mogi

    Massachusetts Institute of Technology

  • Yifan Su

    Massachusetts Institute of Technology MIT, Massachusetts Institute of Technology

  • Stephen D Wilson

    Materials Department, University of California Santa Barbara, University of California, Santa Barbara, UCSB

  • Martin Eckstein

    University of Erlangen–Nuremberg

  • Philipp Werner

    Fribourg University, Université de Fribourg, University of Fribourg

  • Nuh Gedik

    Massachusetts Institute of Technology MIT, Massachusetts Institute of Technology