All-perovskite ferroelectric field effect transistor based on BaSnO₃

Spontaneous polarization in ferroelectricity can be applied to low-power, non-volatile memory devices as well as to neuromorphic devices. Pb(Zr,Ti)O₃ (PZT) is a perovskite ferroelectric with high polarization and low coercive field value (~0.1 MV/cm). All-epitaxially grown perovskite structure PZT ferroelectric capacitors with 4% La-doped BaSnO₃ (BLSO) and SrRuO₃ (SRO) electrodes were fabricated with the pulsed laser deposition (PLD) methods. Effect of electrode materials on ferroelectric was studied with polarization-electric field (P-E) hysteresis measurements. Furthermore, PZT ferroelectric field effect transistors (FeFETs) with BLSO channel layer were fabricated. Counter-clockwise hystereses in transfer curves were observed, which demonstrates ferroelectric behavior on carrier modulation of n-type channel layer.