"Assessing buffer layer effects on the local density of states in high temperature-ALD grown GaN thin films via LT-STM"

This study explores the influence of a AlN/Al2O3 buffer layer on GaN thin films grown via a high temperature atomic layer deposition method using B:Si (111) substrates. The surface composition and chemical bonding environment of the thin films, assessed with X-ray photoelectron spectroscopy, indicate a Ga rich surface and some metal oxide formation. The GaN films have a preferred (110) crystal oriented growth as confirmed by X-ray diffraction. Additionally, the local electronic properties of the thin films were studied via low temperature scanning tunneling microscopy (LT-STM) confirming an n-type behavior due to the GaN thin films, as is expected for Ga rich surfaces. The comparison of local density of states (LDOS) profiles of the GaN/B:Si(111) (without buffer layer), at room temperature and at low temperature (