Transparent superconducting contact to both polarities of graphene
ORAL
Abstract
Graphene has been a favorable platform for studying the superconducting proximity effect thanks to its high electronic mobility and high transparency with superconducting contacts. It is known that many kinds of superconducting materials such as aluminium, niobium, tantalum and molybdenum-rhenium alloys, induce negative doping on graphene in contact with superconducting electrodes due to their work function difference. Thus, when the graphene channel is positively doped, p-n junction is developed near the superconducting contacts, which largely limits the various device scheme utilizing the bipolarity of graphene. Overcoming such issue, we fabricate two-dimensional superconducting contact which is highly transparent to both polarities of graphene. In this structure, the charge concentration of graphene beneath the superconductor and that of graphene channel are independently controlled to minimize the potential barrier between them. Measured contact transparency as well as the magnitude of Josephson critical current at zero magnetic field demonstrate the realization of transparent contact to both polarities of graphene. The contact transparency reaches about 0.6 for n-doped and 0.45 for p-doped regime. Our result paves a promising way to realize various theoretical propositions utilizing the bipolarity of graphene with superconductivity.
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Presenters
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Seong Jang
Pohang Univ of Sci & Tech, Postech
Authors
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Seong Jang
Pohang Univ of Sci & Tech, Postech
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Kenji Watanabe
National Institute for Materials Science, Research Center for Functional Materials, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, NIMS, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan
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Takashi Taniguchi
National Institute for Materials Science, Kyoto Univ, International Center for Materials Nanoarchitectonics, National Institute of Materials Science, Kyoto University, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Science, Japan, National Institute For Materials Science, NIMS, National Institute for Material Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan
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Gil-Ho Lee
Pohang Univ of Sci & Tech