Structural Observation of Voltage Induced Transitions in Neuromorphic Devices
ORAL
Abstract
Voltage induced phase transitions in VO2 and LSMO neuromorphic devices are one pathway to next generation computing. Barrier formation in LMSO has been limited to MOKE measurements, while filament formation in VO2 devices have been observed using optical reflectivity measurements. We present a pathway to observing the structural effects of a voltage induced phase transition in these devices using dark field x-ray microscopy. In addition, preliminary observations of the barrier formation in LSMO are presented and the difficulties with performing such measurements are discussed.
–
Presenters
-
Elliot S Kisiel
University of California, San Diego
Authors
-
Elliot S Kisiel
University of California, San Diego
-
Ishwor Poudyal
Materials Science Division, Argonne National Laboratory
-
Pavel Salev
University of Denver, Department of Physics & Astronomy, University of Denver, University of California, San Diego - University of Denver
-
IVAN K SCHULLER
University of California, San Diego, Department of Physics, University of California San Diego, Department of Physics, University of California, San Diego
-
Alex Frano
UC San Diego, University of California, San Diego
-
Zahir Islam
Argonne National Laboratory