Silicon spin qubits with implanted single donor ions
ORAL · Invited
Abstract
The most versatile method for introducing donors in Si is ion implantation, a foundational technique of the information technology industry that has already demonstrated the production of long-lived phosphorus (31P) donor qubits. To date, we have utilised timed implantation to randomly distribute roughly the desired number of donors in the region of interest of our Si chip. This has allowed us to explore one and two qubit systems, however, in order to produce the large-scale arrays of qubits required to run useful quantum algorithms, we require deterministic ion implantation, in which single donor ions are implanted into precise locations.
Our solution to deterministic implantation relies on implanting donor ions through a moveable nanostencil into desired locations within the Si substrate. We count in single donor ions by collecting the ion beam induced charge (IBIC) signal at biased detector electrodes. Recent work [4] has shown the excellent detection fidelity (99.85 %) of near-surface implanted single 31P ions using these IBIC detectors. This method enables arrays of donors to be fabricated in a step-and-repeat process. Our goal is to integrate these deterministically implanted donors with surface control and readout nanociruitry to produce arrays of donor spin qubits to realise the flip-flop qubit architecture [5].
[1] J. T. Muhonen et al., Nature Nano. 9, 986 (2014)
[2] S. Asaad et al., Nature 579, 205 (2020)
[3] V. Mourik et al., Phys. Rev. E 98, 042206 (2018)
[4] A. M. Jakob et al., Adv. Mat. 34, 2103235 (2022)
[5] G. Tosi et al., Nature Comm. 8, 450 (2017)
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Publication: Madzik, Mateusz T., et al. "Precision tomography of a three-qubit donor quantum processor in silicon." Nature 601.7893 (2022): 348-353<br>Ma¸dzik, Mateusz T., et al. "Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device." Nature communications 12.1 (2021): 1-8<br>Savytskyy, Rostyslav, et al. "An electrically-driven single-atom flip-flop' qubit." arXiv preprint arXiv:2202.04438 (2022)<br>Jakob, Alexander M., et al. "Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper-Bound to 99.85% by Ion–Solid Interactions." Advanced Materials 34.3 (2022): 2103235
Presenters
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Danielle Holmes
University of New South Wales
Authors
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Danielle Holmes
University of New South Wales
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Andrea Morello
University of New South Wales
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David N Jamieson
University of Melbourne
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Alexander M Jakob
University of Melbourne
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Tim Botzem
University of New South Wales
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Serwan Asaad
University of New South Wales
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Vincent Mourik
University of New South Wales
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Holly G Stemp
University of New South Wales
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Irene Fernández de Fuentes
University of New South Wales
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Mateusz T Madzik
Delft University of Technology, QuTech and the Kavli Institute of Nanoscience, Delft University of Technology, Intel, University of New South Wales, QuTech
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Simon G Robson
University of Melbourne
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Rostyslav Savytskyy
University of New South Wales
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Benjamin Joecker
University of New South Wales
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Mark A Johnson
Quantum Motion, University of New South Wales
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Fay E Hudson
1) University of New South Wales, 2) Diraq Pty. Ltd, 1) University of New South Wales, 2) Diraq Pty. Ltd., University of New South Wales
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Andrew S Dzurak
1) University of New South Wales, 2) Diraq Pty. Ltd, 1) University of New South Wales, 2) Diraq Pty. Ltd., University of New South Wales, University of New South Wales, Diraq Pty. Ltd.
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Brett C Johnson
University of Melbourne
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Jeffrey C McCallum
University of Melbourne