Scanning Tunneling Microscopy Study of Epitaxially Grown Fe<sub>3</sub>GeTe<sub>2</sub> Layer on the Topological Insulator Bi<sub>2</sub>Te<sub>3</sub>
ORAL
Abstract
Introducing magnetism to the surface state of topological insulators, such as Bi2Te3, can lead to a variety of interesting phenomena such as magnetoelectric effects, Weyl semimetal phases, and the quantum anomalous Hall effect. We use spin-polarized scanning tunneling microscopy to study a single quintuple layer (QL) of Fe3GeTe2 (FGT) that is grown on Bi2Te3 via molecular beam epitaxy. FGT is a 2D ferromagnetic van der Waals material with a Curie temperature (Tc) that can exceed room temperature. Large topographic images show that the FGT grows as isolated islands on Bi2Te3 and from Bi2Te3 steps. Atomic resolution imaging shows atomic lattices of 3.9(9)Å for FGT and 4.4(0)Å for Bi2Te3. The FGT has a Moire pattern with a periodicity of 4.38(6)nm attributed solely to the lattice mismatch showing that the FGT is rotationally aligned to the Bi2Te3. Much of the surface is covered by a single QL of the FGT, with some small double QL regions. There are also regions with partial terminations, where the second quintuple layer is incomplete. The most common partial termination is the FeGe layer, in which the top two atomic layers are missing. This termination has a distinctive electronic structure and a root 3 reconstruction resulting in a 6.8Å lattice constant on top of the Moire pattern associated with the FGT 3.9(9)Å atomic lattice. Preliminary measurements have been done in a magnetic field with an anti-ferromagnetic Cr tip to probe the magnetic structure and search for magnetic textures.
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Publication: B. Goff, A. Bishop, W. Zhou, R. Kawakami, J. Gupta, Scanning Tunneling Microscopy Study of Epitaxially Grown Fe3GeTe2 Layer on the Topological Insulator Bi2Te3. 12/2022. In Preparation.<br>Wenyi Zhou, Alexander J. Bishop, Menglin Zhu, Igor Lyalin, Robert Walko, Jay A. Gupta, Jinwoo Hwang, and Roland K. Kawakami, Kinetically Controlled Epitaxial Growth of Fe3GeTe2 van der Waals Ferromagnetic Films, ACS Applied Electronic Materials 2022 4 (7), 3190-3197, DOI: 10.1021/acsaelm.2c00185
Presenters
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Brad M Goff
Ohio State University
Authors
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Brad M Goff
Ohio State University
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Alexander J Bishop
Ohio State University
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Wenyi Zhou
The Ohio State University, Ohio State University
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Roland K Kawakami
Ohio State University
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Jay A Gupta
Ohio State University