Probing the Nature of Defects in Graphene by coupling the experimental and calculated Raman Spectra

In this study, we experimentally create different defects density using plasma sputtering with different power on CVD graphene on the SiO2 substrate and the epitaxial graphene grown on the SiC substrate [1]. The measured Raman spectra show the characteristic bands of defective and disordered graphene. Furthermore, we calculate the non-resonant Raman spectra of graphene with different diameters of vacancies and randomly distributed. The experimental and calculated spectra allowed us to identify the Raman modes characteristic of the size of the vacancies. Based on these findings, Raman spectroscopy can be improved to determine the size and type of defects, and these works open ways to control defects in 2D Materials.