APS Logo

Controlling the Electronic Structure of Twisted Bilayer Graphene Devices

ORAL

Abstract

Flat bands in twisted bilayer graphene host many intriguing correlated phases including unconventional superconductivity and chern insulation. How the doping and displacement field-dependent properties of these bands affect the emergence of such symmetry-breaking phases remains an open fundamental question. Here, using angle resolved photoemission spectroscopy, we study the effects of many-body interactions and displacement field on the band structure of twisted bilayer graphene field-effect devices.

–

Presenters

  • Nicholas G Dale

    University of California, Berkeley

Authors

  • Nicholas G Dale

    University of California, Berkeley

  • Iqbal B Utama

    Northwestern University

  • Sihan Zhao

    University of California, Berkeley

  • Kyunghoon Lee

    Lawrence Berkeley National Laboratory, Bleximo Corp.

  • Takashi Taniguchi

    National Institute for Materials Science, Kyoto Univ, International Center for Materials Nanoarchitectonics, National Institute of Materials Science, Kyoto University, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Science, Japan, National Institute For Materials Science, NIMS, National Institute for Material Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Kenji Watanabe

    National Institute for Materials Science, Research Center for Functional Materials, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, NIMS, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Christopher Jozwiak

    Lawrence Berkeley National Laboratory, LBNL, The Advanced Light Source, lawrence berkeley national lab, Lawrence Berkeley National Lab, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America, Advanced Light Source, Lawrence Berkeley National Lab

  • Roland Koch

    Lawrence Berkeley National Labs, Lawrence Berkeley National Lab, Lawrence Berkeley National Laboratory

  • Eli Rotenberg

    Lawrence Berkeley National Laboratory, Advanced Light Source, Lawrence Berkeley National Lab

  • Aaron Bostwick

    Lawrence Berkeley National Laboratory, LBNL, The Advanced Light Source, lawrence berkeley national lab, Lawrence Berkeley National Lab, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America, Advanced Light Source, Lawrence Berkeley National Lab

  • feng wang

    University of California, Berkeley

  • Alessandra Lanzara

    University of California, Berkeley