Reporting and benchmarking emerging field-effect transistors

Field-effect transistors (FETs) based on emerging nanomaterials, such as two-dimensional (2D) van der Waals materials, are widely used to determine the electrical properties of these novel materials. However, there is a lack of consistent reporting and benchmarking of emerging FETs due to the interdisciplinary nature of the 2D research community. In collaboration with more than a dozen global colleagues from industry, academia, and government labs, we explicitly have described consensus recommendations for benchmarking and reporting emerging FETs made with 2D materials to address this issue. [1] The essentials of these guidelines are as follows. The device geometry must be completely described. Appropriate current-voltage characteristics need to be measured and fully reported, and the experimental and analysis procedures described in detail. We present consistent approaches to extract key FET parameters and performance metrics. Monolayer MoS₂ FETs are used to illustrate these protocols and benchmarking plots are shown to compare important device parameters. These guidelines should help promote better methods for assessing device performance in emerging FETs which will enable well-informed decisions by the research community, industry, and funding agencies.

[1] Zhihui Cheng, et al. Nature Electronics 5, pp. 416–423 (29 JUL 2022).