Defects in 2D TMDs for Quantum Sensing Applications

The nitrogen-vacancy (NV) color center defect in diamond has been widely used in quantum sensing experiments. Defects in two-dimensional (2D) transition metal dichalcogenides (TMDs) semiconductors are relatively less characterized. As wide bandgap semiconductors, 2D TMDs are potentially a host for defect energy states within the bandgap, as in the case of NV color center in diamond. We performed structural and optical characterization of exfoliated and Chemical Vapor Deposition (CVD) grown 2D TMD samples. We have observed photoluminescence emission from defects in WSe₂ at cryogenic temperatures. We will also present our results on optically detected magnetic resonance (ODMR) characterization experiments.