Characterizing crosstalk in simultaneously driven Si/SiGe spin qubits

Spin qubits fabricated in isotopically enriched Si/SiGe heterostructures are promising candidates for building reliable and scalable quantum computing systems. Recent experiments have demonstrated single-qubit gates with a fidelity F > 99.95% and two-qubit gates with F > 99.8% [1-5]. However, as device architectures scale up to support multi-qubit operations,

crosstalk effects become more prominent and limit overall gate fidelities [6]. To mitigate crosstalk errors, a thorough understanding of crosstalk mechanisms is needed. Here, we report

recent efforts to investigate crosstalk in a multi-qubit Si/SiGe quantum dot device during simultaneous driving.

[1] J. Yoneda et al., Nat. Nanotechnol. 13, 102 (2018).

[2] A. Mills et al., Sci. Adv. 8, eabn5130 (2022).

[3] X. Xue et al., Nature 601, 343 (2022).

[4] A. Noiri et al., Nature 601, 338 (2022).

[5] W. Huang et al., Nature 569, 532 (2022).

[6] I. Heinz et al., Phys. Rev. B 104, 045420 (2021).