Low and high field ambipolar mobility in BAs based on two phonon scattering

Boron Arsenide (BAs) has drawn significant interest due to its high thermal conductivity and ambipolar charge mobility [1, 2]. These properties make BAs a promising candidate electronic material for future technological applications. Recently, higher-order electron-phonon scattering processes in polar and non-polar semiconductors have been reported to have a non-negligible impact on charge transport [3, 4, 5]. Here, we report an ab initio study of two-phonon electron and hole scattering processes in BAs at both low and high electric fields. We find that inclusion of these higher-order processes significantly reduces the computed low and high field charge carrier mobility by 20-30%. One and two-phonon processes involving longitudinal optical phonons are found to have little effect on either low and high-field transport properties owing to the high optical phonon energy relative to thermal charge carrier energies.