Effects of Pressure on Electronic and Magnetic Properties of Bulk NiI<sub>2</sub>
ORAL
Abstract
Transition metal dihalides have recently garnered interest in the context of two-dimensional van der Waals magnets as their underlying geometrically frustrated triangular lattice leads to interesting competing exchange interactions. In particular, NiI2 is a centrosymmetric magnetic semiconductor that has been long known for its exotic helimagnetism in the bulk. Recent breakthrough experiments have shown that the helimagnetic state survives down to the monolayer limit with a layer-dependent magnetic transition temperature that suggests a relevant role of the interlayer coupling. Here, we explore the evolution of the electronic structure and magnetic exchange interactions in NiI2 as a function of external pressure using first-principles calculations and Monte Carlo simulations. We find that the leading interlayer coupling is an antiferromagnetic second-nearest neighbor interaction that increases monotonically with pressure. The ratio between isotropic third- and first-nearest neighbor intralayer exchanges, which determines the magnetic propagation vector q of the helimagnetic ground state, monotonically increases in magnitude with pressure. As a consequence, our Monte Carlo simulations show a monotonic increase in the magnetic transition temperature indicating that pressure is an effective means to tune the magnetic ground state of NiI2.
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Presenters
Jesse Kapeghian
Arizona State University
Authors
Jesse Kapeghian
Arizona State University
Antia S Botana
Argonne National Laboratory, Arizona State University
Danila Amoroso
CNR-SPIN, University of Liege
Matthieu J Verstraete
University of Liege
Connor A Occhialini
Massachusetts Institute of Technology
Luiz Gustavo Pimenta Martins
Massachusetts Institute of Technology, MIT, Massachusetts Institute of Technology
Qian Song
Massachusetts Institute of Technology, Massachusetts Institute of Technology MIT
Jesse S Smith
Argonne National Lab, Argonne National Laboratory
Joshua J J Sanchez
University of Washington, Massachusetts Institute of Technology
Jing Kong
Massachusetts Institute of Technology
Riccardo Comin
Massachusetts Institute of Technology MIT, Massachusetts Institute of Technology