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STM spectroscopy of a gate-switchable moiré quantum anomalous Hall insulator

ORAL

Abstract

Twisting and stacking atomically-thin materials provides a versatile platform for investigating emergent quantum phases of matter driven by strong correlation and non-trivial topology. Novel phenomena such as correlated insulating states, unconventional superconductivity, and the quantum anomalous Hall (QAH) effect have been observed in different twisted moiré systems, but a full understanding of their underlying microscopic mechanisms remains a challenge. We have used scanning tunneling microscopy and spectroscopy to explore the interplay between correlation, topology, and local atomic structure in determining the behavior of a QAH insulator made from twisted monolayer-bilayer graphene (a sandwich of monolayer and bernal-stacked bilayer graphene with a small twist between them). We observe local spectroscopic signatures of correlated insulating states having total Chern number Ctot = +2 and -2 at ¾-filling of the conduction moiré mini-band and have characterized their evolution in an out-of-plane magnetic field. We have determined the relationship between topological behavior, local twist angle, and local hetero-strain, and show that Ctot can be switched between +2 and -2 via electrostatic gating only over a limited range of twist angle and strain. Electrical control of the Chern number results from a competition between the orbital magnetization of bulk bands and chiral edge states that is highly sensitive to distortion of the moiré superlattice.

Publication: Canxun Zhang, Tiancong Zhu, Tomohiro Soejima, Salman Kahn, Kenji Watanabe, Takashi Taniguchi, Alex Zettl, Feng Wang, Michael P. Zaletel, Michael F. Crommie, "Local spectroscopy of gate-switchable Chern insulating states in twisted monolayer-bilayer graphene", arXiv:2210:06506.

Presenters

  • Salman A Kahn

    University of California, Berkeley

Authors

  • Canxun Zhang

    University of California, Berkeley

  • Tiancong Zhu

    University of California, Berkeley, UC Berkeley

  • Tomohiro Soejima

    University of California, Berkeley

  • Salman A Kahn

    University of California, Berkeley

  • Kenji Watanabe

    National Institute for Materials Science, Research Center for Functional Materials, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, NIMS, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Takashi Taniguchi

    National Institute for Materials Science, Kyoto Univ, International Center for Materials Nanoarchitectonics, National Institute of Materials Science, Kyoto University, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Science, Japan, National Institute For Materials Science, NIMS, National Institute for Material Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Alex K Zettl

    University of California, Berkeley

  • feng wang

    University of California, Berkeley

  • Michael P Zaletel

    University of California, Berkeley, UC Berkeley

  • Michael F Crommie

    University of California, Berkeley