APS Logo

Berry curvature dipole senses topological transition in twisted double bilayer graphene

ORAL

Abstract

The topological phase of quantum materials can be characterized by the band-specific topological invariant Chern number. Often, systems undergo a transition between topological phases, and these transitions are hard to detect. Moiré systems host flat Chern bands. However, time-reversal symmetry dictates the Chern numbers from two valleys, namely, K and K', to be opposite, making the total Chern number CK + CK' = 0. In such cases, Berry curvature dipole (BCD) can be used as an indicator of the underlying topological transition of the valley Chern type, that is, a change in Z2=(CK – CK')/2. Unlike the quantum Hall effect or anomalous Hall effect, the approach based on the BCD does not require explicitly breaking the time-reversal symmetry. We reveal, using the nonlinear Hall (NLH) effect measurements in twisted double bilayer graphene (TDBG), that the BCD detects Z2 transition and changes its sign. Furthermore, we find hysteresis of longitudinal and NLH responses with electric field that can be attributed to switching of electric polarization in moiré systems—this holds promise for next-generation Berry curvature-based memory devices. Probing topological transitions, as we show, can be emulated in other 3D topological systems.

Publication: Nature Physics, 18, 765-770 (2022).

Presenters

  • Pratap C Adak

    Tata Institute of Fundamental Research (

Authors

  • Subhajit Sinha

    Tata Institute of Fundamental Research

  • Pratap C Adak

    Tata Institute of Fundamental Research (

  • Atasi Chakraborty

    Indian Institute of Technology, Kanpur

  • Kamal Das

    Indian Institute of Technology, Kanpur

  • Koyendrila Debnath

    Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore

  • L. D. Varma Sangani

    Tata Institute of Fundamental Research, Mumbai

  • Kenji Watanabe

    National Institute for Materials Science, Research Center for Functional Materials, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, NIMS, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Takashi Taniguchi

    National Institute for Materials Science, Kyoto Univ, International Center for Materials Nanoarchitectonics, National Institute of Materials Science, Kyoto University, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Science, Japan, National Institute For Materials Science, NIMS, National Institute for Material Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Umesh V Waghmare

    Jawaharlal Nehru Centre for Advanced Scientific Research, Bengaluru, India, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore,

  • Amit Agarwal

    Department of Physics, Indian Institute of Technology, Kanpur-208016, India, IIT Kanpur, India

  • Mandar M Deshmukh

    Tata Institute of Fundamental Research, Tata Inst of Fundamental Res