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Strongly temperature-dependent spin-orbit torque in sputtered WTe<sub>x</sub>

ORAL

Abstract

Type-II Wely semimetals have attracted considerable interest due to the strong spin-orbit coupling and Fermi arc surface states. Recently, large charge-to-spin conversion was also observed in amorphous Wely semimetals. Here, we report the strong temperature dependence of the SOT efficiency of sputtered WTex. The SOT efficiency is 0.35 under 295 K, dramatically increasing to a sizeable SOT efficiency above 3.5 under 12 K. We further perform current-induced switching of perpendicular magnetization in sputtered WTex devices from 12 K to room temperature. Our results show the potential of the industrial application based on sputtered Wely semimetals.

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Publication: None.

Presenters

  • ZHEYU REN

    Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China

Authors

  • ZHEYU REN

    Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China

  • RUIZI LIU

    HKUST, Department of Electrical Engineering, Clear Water Bay, Hongkong, HKUST, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China

  • SHUN KONG CHEUNG

    Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China

  • KUN QIAN

    HKUST, Department of Electrical Engineering, Clear Water Bay, Hongkong, HKUST, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China

  • XUEZHAO WU

    Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China

  • ZHIHUA XIAO

    Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China

  • ZIHAN TONG

    Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China

  • JIACHENG LIU

    Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China

  • XIAOLIN REN

    Department of Physics, The Hong Kong University of Science and Technology, Hong Kong, China

  • QIMING SHAO

    HKUST, Department of Electrical Engineering, Clear Water Bay, Hongkong, HKUST, Hong Kong University of Science and Technology, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China