Disorder-Induced Fermi Arcs in Charge Density Wave Systems

Recently, the five-layered Ba₂Ca₄Cu₅ O₁₀ (F,O)₂ with lightly doped inner planes was studied in

experiments1 . Both Fermi arcs (from the two outer planes) and Fermi pockets (from the two

middle-inner planes and the one inner-most plane) were observed in the experiment. Motivated by

the experimental result in Ba₂Ca₄Cu₅ O₁₀ (F,O)₂ , in this paper, we study the effects of disorder in

charge density waves. By the T -matrix approximation, we calculate the disorder-averaged spectral

function and find the Fermi pockets evolve into Fermi arcs as we change the concentration of the

disorder. We further calculate the transport coefficients, i.e., the Hall coefficient and the specific

heat coefficient. We find the Hall coefficient is nearly a constant as we increasing the concentration

of disorder. Finally we give a mechanism for the formation of Fermi arcs, which may be helpful for

the understanding of cuprates.