Photonic Structures and Divacancy Defects in the 4H-SiC-on-Insulator Platform

Fully integrated, chip-scale devices are envisioned to serve as nodes in a quantum network. Fabrication of these devices would be greatly facilitated by a CMOS-foundry-compatible monolithic material platform capable of hosting key elements such as spin qubits, low-loss photonic waveguides, nonlinear optical elements (i.e. for frequency conversion and entangled photon pair generation), electro-optically tunable components (i.e. for switches and filters), and single-photon detectors. To this end, 4H silicon carbide (4H-SiCOI) is a promising monolithic platform for mass production of quantum integrated photonic circuits. However, a key remaining challenge is the integration of the above-mentioned components into a single device. In this talk we will discuss our work on producing 100 mm diameter wafers of thin film 4H-SiCOI and fabricating single mode photonic waveguide structures with low loss (< 10 dB/cm) across a large spectral region spanning the near infrared to telecom wavelengths. We will then highlight our work on integrating divacancy defect ensembles into these low loss waveguides. Finally, we will show our progress toward optically detected spin resonance of these near-infrared emitting divacancy defect ensembles using integrated superconducting nanowire single-photon detectors (SNSPDs). Our progress with these integrated devices shows that 4H-SiCOI is a promising material platform for quantum integrated photonics.