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Phase transitions between competing correlated states in a low-twist semiconductor moiré lattice

ORAL

Abstract

Transition metal dichalcogenide (TMD) moiré superlattices are an ideal platform to study strongly correlated quantum phases because they host flat electronic bands which are highly tunable. In this talk, I will present scanning single-electron transistor measurements of a twisted TMD bilayer with a long moiré wavelength. The large moiré unit cell area enables experimental access over a broad range of charge density and magnetic flux per moiré unit cell. Our local electronic compressibility measurements reveal an intricate phase diagram with regions of competing and coexisting correlated phases with distinct physical character separated by phase transitions. I will discuss how the phase diagram reflects the ability to experimentally control the occupation of multiple moiré bands and the effective interactions within them.

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Presenters

  • Carlos R Kometter

    Stanford Univ, Stanford University

Authors

  • Carlos R Kometter

    Stanford Univ, Stanford University

  • Jiachen Yu

    Stanford University

  • Trithep Devakul

    MIT

  • Aidan P Reddy

    Massachusetts Institute of Technology MIT

  • Yang Zhang

    MIT, Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA, Massachusetts Institute of Technology, Massachusetts Institute of Technology MIT

  • Kenji Watanabe

    National Institute for Materials Science, Research Center for Functional Materials, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, NIMS, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Takashi Taniguchi

    National Institute for Materials Science, Kyoto Univ, International Center for Materials Nanoarchitectonics, National Institute of Materials Science, Kyoto University, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Science, Japan, National Institute For Materials Science, NIMS, National Institute for Material Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Liang Fu

    Massachusetts Institute of Technology MIT, Massachusetts Institute of Technology

  • Ben Feldman

    Stanford University, Stanford Univ