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Mobility exceeding 100,000cm<sup>2</sup>/Vs in shallow InAs quantum wells

ORAL

Abstract

The two-dimensional electron gas (2DEG) formed in shallow InAs quantum wells with InGaAs barriers grown on InP is a promising platform for achieving topological superconductivity. Strong spin-orbit coupling and induced superconductivity are key ingredients. In addition, it is desirable to optimize 2DEG mobility. In this study, we assess the impact of modulation doping on shallow InAs quantum well heterostructures; we report on the magnetotransport properties as a function of the doping density and the spacer thickness. We find mobility may be enhanced in the modulation-doped heterostructures in which the silicon dopants are placed below the quantum well. Our analysis suggests that the doping layer pulls the electron wavefunction away from the surface, reducing the effect of surface scattering, leading to higher mobility. Impact on Rashba spin-orbit coupling and induced superconductivity will also be discussed.

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Presenters

  • Teng Zhang

    Department of Physics and Astronomy, and Birck Nanotechnology Center, Purdue University

Authors

  • Teng Zhang

    Department of Physics and Astronomy, and Birck Nanotechnology Center, Purdue University

  • Tyler Lindemann

    Department of Physics and Astronomy, Birck Nanotechnology Center, and Microsoft Quantum Lab Purdue, Purdue University, Purdue University, Microsoft Quantum Materials Lab-Purdue, West Lafayette, Indiana 47907, USA, Purdue University

  • Kasun Premasiri

    Department of Physics and Astronomy, and Birck Nanotechnology Center, Purdue University

  • Tailung Wu

    Department of Physics and Astronomy, Birck Nanotechnology Center, and Microsoft Quantum Lab Purdue, Purdue University

  • Michael J Manfra

    Department of Physics and Astronomy, Birck Nanotechnology Center, and Microsoft Quantum Lab Purdue, Purdue University, Purdue University, Purdue University, West Lafayette, Indiana 47907, USA