Voltage Induced Strain Control of Perpendicular Magnetic Anisotropy in Yttrium Substituted Dysprosium Iron Garnets

Voltage control of spintronic devices can be extremely energy efficient, which is useful to perform energy intensive classification tasks in edge devices where power is a constraint [1, 2]. In this study, we perform voltage controlled perpendicular magnetic anisotropy (PMA) modulation in Yttrium substituted Dysprosium Iron Garnet (Y:DyIG) thin film. The film is grown over a piezoelectric substrate PMN-PT where the optimal ratio of Y and DyIG provides low coercivity and high saturation moment. PMA in the film is generated due to strain resulting from thermal mismatch between the film and substrate. Voltages are applied across the thickness of the PMN-PT/SiO2/Y-DyIG heterostructure to pole the piezoelectric along [011] direction (perpendicular to surface). Changes in PMA by applied poling voltages were studied by magnetometry. We report strain-induced modulation of PMA through the magnetoelastic effect.

[1]. M. A. Azam et al., Nanotechnology, 31, 145201 (2020)

[2] W. A. Misba, J. Atulasimha et al., IEEE TED, 2021 (Early Access)