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Probing the Variation of the Intervalley Tunnel Coupling in a Silicon Triple Quantum Dot

ORAL

Abstract

The “valley splitting” of the two lowest-lying valleys in silicon quantum wells is known to be sensitive to atomic scale disorder. A large valley splitting is desirable to have a well-defined spin qubit. In addition, an understanding of the intervalley tunnel coupling that couples different valleys in adjacent quantum dots is extremely important, as the resulting gaps in the energy-level diagram may affect the fidelity of charge and spin-transfer protocols in silicon quantum-dot arrays. We use microwave spectroscopy to probe variations in the valley splitting, and the intra- and intervalley tunnel couplings (tij and tij’) that couple dots i and j in a triple quantum dot. We uncover large variations of tij’/tij and linear scaling of tij’ with tij, as expected from theory. The results indicate strong interactions between different valley states on neighboring dots, which we attribute to local inhomogeneities in the silicon quantum well.

Presenters

  • Felix F Borjans

    Department of Physics, Princeton University / Components Research, Intel Corporation, Intel Corporation, Hillsboro, Intel Corporation - Hillsboro

Authors

  • Felix F Borjans

    Department of Physics, Princeton University / Components Research, Intel Corporation, Intel Corporation, Hillsboro, Intel Corporation - Hillsboro

  • Xuanzi Zhang

    Department of Physics, Princeton University, Princeton University

  • Xiao Mi

    Department of Physics, Princeton University / Google Inc. - Santa Barbara, Google

  • Guangming Cheng

    Princeton Institute for Science and Technology of Materials, Princeton University

  • Nan Yao

    Princeton Institute for Science and Technology of Materials, Princeton University, Princeton University

  • Jason R Petta

    Princeton University, Department of Physics, Princeton University