Cryogenic optical characterization of T center in ion-implanted silicon for spin-photon interface

T center in Silicon (Si) is recently found to be one of the important platforms for telecom optical access quantum memory due to its competitive long Hana-echo electron spin coherent time (> ms) and reasonable short bound exciton lifetime (< µs). The established silicon-based manufacture in integrated electronics and photonics platforms leverage the potential application of such color centers for quantum network. In this study, we create T centers in the Boron doped float-zone (FZ) Si and Czochralski Si-on-insulator (CZ-SOI), respectively, by ion-implantation with C and H, followed by rapid thermal annealing (RTA) and boiling in the deionized water. We characterize the T center emission around 1325 nm at cryogenic temperature by using a confocal infrared micro-photoluminescence (PL). PL results reveal that the T center in CZ-SOI wafer has a larger linewidth than the bulk, which can be related to increased inhomogeneities induced by higher Oxygen concentration. We observe additional defect center luminescence around T center line, which can be associated as a precursor related to H populations and defect migrations. Such extra defect emission disappears as boiling the wafer at proper temperature, which promotes the T center formation. However, T center can be passivated entirely by excess H during the boiling process. We then perform Raman spectroscopy to study the local vibration mode of T center, a Raman shift at 1053.57 cm^-1 is observed and associated with T centers. Eventually, we model the cavity quantum electrodynamics (cQED) of T center integrated with a L5 photonic crystal (PhC) cavities for cavity-enhanced spin-photon devices. An ensemble Rabi oscillation 50×15.9 GHz can be achieved, indicating the feasibility of coherent control via strong coupling.