Time efficient pattern simulation in multiport Hele-Shaw cells using Voronoi tessellations
ORAL
Abstract
Controlled fabrication of families of array patterns has been reported in the recent past using spatially varying port locations in multiport Hele-Shaw cells (MPHSC). Numerical simulations of this phenomenon are computationally expensive, requiring the solution of a time-dependent Poisson's equation with temporally varying boundary conditions. In this paper, we propose simulations of crystal-growth Voronoi tessellations to obtain, within engineering accuracy, the final patterns formed in MPHSC and to enable further interesting investigations. Specifically, we investigate situations with large numbers of ports, and situations where ports on a fixed lattice are digitally controlled both in time and space. The fast marching algorithm employed here substantially reduces the time required for simulation. Our predictions are compared to the CFD results and experimental results to demonstrate efficacy and assess conditions under which the proposed crystal-growth Voronoi diagrams model the final state well.
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Presenters
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Siddharth Tiwary
Indian Institute of Technology Bombay
Authors
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Siddharth Tiwary
Indian Institute of Technology Bombay
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Rohit Rushil
Indian Institute of Technology Bombay
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Sachin D Kanhurkar
Indian Institute of Technology Bombay, Powai, India
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Rupesh Shingte
Indian Institute of Technology Bombay
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Nihal Tilekar
Indian Institute of Technology Bombay
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Amitabh Bhattacharya
Indian Institute of Technology Delhi
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Prasanna Gandhi
Indian Institute of Technology Bombay