Anisotropic Electronic Transport Properties of ReSe₂ Field-Effect Transistors

Few-layer van der Waals (vdW) semiconductors have been at the forefront of optimizing electronic transport due to their weak inter-layer forces, tunable band gaps, and ability to create unique layered structures.  ReSe₂ has shown to have anisotropic electronic and optoelectronic properties induced by interlayer coupling, in addition to having a native oxide, ReO₂, which makes it an interesting material for electronic transistor applications.  In this study, we have experimentally characterized the electronic transport of n-type and p-type ReSe₂ field effect transistors.  This project also probes the temperature dependence of the anisotropic properties of these devices.