Electrical generation and deletion of magnetic skyrmions via vertical current injection
ORAL
Abstract
Due to its distinct topological features, magnetic skyrmions have recently been considered to be a novel information carrier in spintronics[1, 2]. The electrical creation/deletion of a magnetic skyrmion is ecessential in realizing skyrmion-based spintronics devices. Therefore, various experimental demonstrations of skyrmion creation/deletion have been reported using diverse methods [3, 4]. However, most of them have been created near a randomly created defect site, disturbing the skyrmion motion after the creation. Here, we introduce a new method for electrical creating, deleting, and shifting magnetic skyrmions by adopting a vertical current injection. We will show proof-of-concept demonstration of skyrmion reacetrack memory.
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Publication: [1] Nagaosa, N. et al., Nat. Nanotechnol. 8, 899-911 (2013).<br>[2] Christian, H. B. et al., J. Phys. D Appl. phys. (2020).<br>[3] Woo, S. et al., Nat. Mater. 15, 501-506 (2016).<br>[4] Büttner, F. et al., Nat. Nanotechnol. 12, 1040-1044 (2017).<br>
Presenters
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Seungmo Yang
Korea Research Institute of Standards and Science
Authors
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Chanyong Hwang
Korea Research Inst of Standards and Sci, Korea Research Inst of Standards and Science (KRISS)
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Seungmo Yang
Korea Research Institute of Standards and Science
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Kyoung-Woong Moon
Korea Research Institute of Standards and Science
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Tae-Seong Ju
Korea Research Institute of Standards and Science