Simulation Aided Design of a Six Dot Si/SiGe Spin Qubit Device

High fidelity single and two-qubit gates have been achieved in small Si/SiGe quantum processors [1,2]. In larger quantum dot arrays, the quantum dot charge detectors can have an appreciable impact on the confinement potential of the adjacent spin qubit array [3], complicating device tune-up. Optimization of the charge detector placement to maximize charge sensing fidelity and minimize undesired impacts on the spin qubit array is an outstanding challenge. We simulate the electron density of a six dot linear array in Si/SiGe to characterize the impact of the adjacent charge sensors using a Schrödinger-Poisson based device model.

[1] Yoneda et al., Nature Nanotechnology 13, 102 (2018) 

[2] Zajac et al., Science 359, 439 (2018)

[3] Mills et al., Nature Communications 10, 1063 (2019)