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Cavity Quantum Electrodynamics in Silicon Carbide Photonics with Color Centers

ORAL

Abstract

We demonstrate cavity quantum electrodynamics experiments with the silicon vacancy in 4H-Silicon-Carbide-on-Insulator integrated photonics. We show nearly-transform-limited, stable quantum emission from silicon vacancy defects in a microdisk resonator and observe emitter-cavity cooperativity approaching unity. We observe single- and two-photon interference between a pair of silicon vacancies, a prerequisite for multi-emitter quantum photonics in Silicon Carbide.

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Publication: Lukin et al, 4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics, Nat. Photonics (2020)<br>Lukin et al., Spectrally reconfigurable quantum emitters enabled by optimized fast modulation, npj Quantum Info (2020)<br>Lukin et al., Integrated Quantum Photonics with Silicon Carbide: Challenges and Prospects, PRX Quantum (2020)<br>Lukin et al., manuscript in preparation.<br>

Presenters

  • Daniil M Lukin

    Stanford University

Authors

  • Daniil M Lukin

    Stanford University

  • Melissa A Guidry

    Stanford University

  • Joshua Yang

    Stanford University

  • Sattwik Mishra

    Stanford University

  • Misagh Ghezellou

    Linkoping University

  • Hiroshi Abe

    National Institutes for Quantum Science and Technology (QST), Takasaki, Japan, National Institutes for Quantum Science and Technology

  • Takeshi Ohshima

    National Institutes for Quantum Science and Technology (QST), Takasaki, Japan, National Institutes for Quantum Science and Technology

  • Jawad Ul Hassan

    Linkoping University, Linköping University

  • Jelena Vuckovic

    Stanford University, Stanford Univ