Modeling the Optical Properties of Hidden Silicon-Vacancy Centers in Diamond

Investigations into the dynamics of a high-density sample of negatively charged silicon-vacancy (SiV^-) centers in diamond have recently led to the discovery of a "hidden" population of SiV^- centers that is not typically observed under photoluminescence, but which nevertheless exhibits interesting electronic coherence properties [1]. The hidden SiV^- center population is also much more spectrally inhomogeneous than its photoluminescing counterpart in the same sample, indicating the likely impact of strain. Despite this, the detailed mechanism by which strain reduces photoluminescence intensity and affects electronic coherence times remains unknown. In this talk, we summarize the development of a theoretical model, based on density matrix perturbation theory, that explains the origin of the hidden-center population's properties by means of interactions involving a nonradiative dark state. Results may have implications for color-center based quantum devices and the development of quantum networks.

[1] C. L. Smallwood, et al., Phys. Rev. Lett. 126, 213601 (2021).