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Role of pressure induced c-f hybridization on the valence transition in EuPd<sub>2</sub>Si<sub>2</sub>

ORAL

Abstract

Tetragonal EuPd2Si2 is well-known to show a valence transition from divalent (Eu2+) to trivalent (Eu3+) states by a change in temperature or pressure. However, its mechanism has not been completely studied yet. In this presentation, we will address the microscopic origin of the valence transition in tetragonal EuPd2Si2 under pressure using a combination of ab initio calculations and photoemission measurements. Our results indicate that an enhanced c-f hybridization between localized Eu 4f states and itinerant conduction states ( Eu 5d, Pd 4d, and Si 3p ) plays a vital role for the valence transition to happen. Lastly, the effects of Au doping on the valence states of EuPd2Si2 will be also discussed.

Presenters

  • Young-Joon Song

    Institut für Theoretische Physik, Goethe-Universität Frankfurt am Main

Authors

  • Young-Joon Song

    Institut für Theoretische Physik, Goethe-Universität Frankfurt am Main

  • Susanne Schulz

    Institut für Festkörper – und Materialphysik, Technische Universität at Dresden

  • Kristin Kliemt

    Kristall- und Materiallabor, Physikalisches Institut, Goethe-Universität Frankfurt am Main

  • Cornelius Krellner

    Kristall- und Materiallabor, Physikalisches Institut, Goethe-Universität Frankfurt am Main

  • Roser Valenti

    Goethe University Frankfurt