Light-induced Topological Phase transitions in 1T' Transition Metal Dichalcogenides
ORAL
Abstract
Using ab initio tight-binding approaches, we investigate Floquet band engineering of the 1T' phase of transition metal dichalcogenides (MX2, M = W, Mo and X = Te, Se, S) monolayers under the irradiation with circularly polarized light. Our first principles calculations demonstrate that light can induce important transitions in the topological phases of this emerging materials family. For example, upon irradiation, Te-based MX2 undergoes a phase transition from quantum spin Hall (QSH) semimetal to time-reversal symmetry broken QSH insulator with a nontrivial band gap of up to 92.5 meV. On the other hand, Se- and S-based MX2 undergoes the topological phase transition from the QSH effect to the quantum anomalous Hall (QAH) effect and into trivial phases with increasing light intensity. From a general perspective, our work brings further insight into non-equilibrium topological systems.
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Publication: arXiv: 2109.04557
Presenters
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Xiangru Kong
Oak Ridge National Lab
Authors
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Xiangru Kong
Oak Ridge National Lab
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Wei Luo
Oak Ridge National Lab
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Linyang Li
Hebei University of Technology
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Mina Yoon
Oak Ridge National Lab
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Tom Berlijn
Oak Ridge National Lab, Oak Ridge National Laboratory, Oak Ridge National Laboratory, TN, USA
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Liangbo Liang
Oak Ridge National Lab, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States