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Zero-field spin splitting in high-mobility undoped InSb<sub>1-x</sub>As<sub>x</sub> heterostructures

ORAL

Abstract

We report on the electrical properties of a series of undoped InSb1-xAsx quantum wells grown on GaAs substrates. We study three samples with Arsenic concentrations of 5, 13, and 19%. At 5% As concentration the two-dimensional electron gas (2DEG) displays a mobility peak of 24 m2 /Vs at a density of 2.5 × 1015 m-2 ; this value is comparable to previously reported values for binary InSb quantum wells of similar design. High mobility and strong spin-orbit coupling allow us to observe beating in the Shubnikov de Haas oscillations at low magnetic field, facilitating assessment of the Rashba coupling parameter. A gate tunable zero-field spin splitting was observed, increasing with higher As concentration when comparing samples at fixed 2DEG density. The maximum Rashba parameter extracted is ~ 300 meVÅ for the 19% As sample.

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Presenters

  • Sara Metti

    1.School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907. 2. Birck Nanotechnology Center, Purdue University, West Lafayette IN, 47907

Authors

  • Sara Metti

    1.School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907. 2. Birck Nanotechnology Center, Purdue University, West Lafayette IN, 47907

  • Di Xiao

    1.Department of Physics and Astronomy, Purdue University, West Lafayette IN, 47907. 2 Birck Nanotechnology Center, Purdue University, West Lafayette IN, 47907, Purdue University

  • Candice Thomas

    1. Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907. 2.Birck Nanotechnology Center, Purdue University, West Lafayette IN, 47907, Purdue University

  • Michael J Manfra

    Department of Physics and Astronomy, Birck Nanotechnology Center, and Microsoft Quantum Lab Purdue, Purdue University, Purdue University, Purdue University, West Lafayette, Indiana 47907, USA