Coulomb Blockade in a Fully Integrated Commercial CMOS Technology Quantum Dot Array with Charge Readout

Coulomb blockade is usually used to demonstrate the quantization of the

charge in the characterisation of quantum dots, building blocks of semiconductor

qubits. In the presented work, we provide the details of quantum dot arrays

build using a one-dimensional array of commercial eld transistor appearting at

3.7 K. The charging of such dots and readout is fully integrated on the same

die and implemented at the edges of quantum dot arrays.

The structures have been designed in a V-shape geometry, allowing the for-

mation of con nement potential wells. As a result, a quantum dot array that

consists of quantum dots connected in series is formed. The modelling of the

structures has been carried out using nite element method (electromagnetic

and quantum mechanical based on 2 dimensional Schrdonger equation). In ad-

dition to that, modelling of the contact points to the dots has been carried

out. Experimental characterisation shows that plateaus of constant charge, as-

sociated with quantization, appear when an experiment to charge a quantum

dot is carried out. We nd that the Coulomb blockade properties can be fully

controlled by the digital and DC voltages applied to control the structures.