Absorption coefficient study for Al_xGa_1-xAs Konwent quantum well potential profile as a function of electric, magnetic, and intense laser field effects.

Optoelectronic properties for semiconductor quantum wells are among the most studied systems in solid state physics devices. Nevertheless, this is a topic that deserves attention because the quantum well (QW) shape than can consider important physical facts as the impurity diffusion, that in combination with external factors as electromagnetic fields or intense laser field effects, allows to investigate possible new behaviors for the optical properties of interest. In this line, we consider an Al_xGa_1-xAs quantum well potential profile given by the Konwent potential, that as a function of the parameters can generate a single or double QW than can be shaped with the aluminum concentration. In this study we compute the electronic structure for system by working within the effective mass approximation for solving the one-electron Schrodinger equation, we report the absorption coefficient for the system as a function of the parameters of the Konwent potential. Then, we investigate the effect of an electric field applied in the confinement direction (z) as well as an in-plane (x-directed) constant magnetic field. Finally, we also investigate the effect of a non-resonant intense laser field effect on the system. Here we can conclude that the Konwent potential parameters allow to tune the optical properties for energies ranging from 20 up to 100 meV; that the electric field induces a blue-shift, and a diminishing of the intensity, for the optical response; that the magnetic field also indices a small blue-shift, but practically without intensity lost; and that the intense laser field also induces a stronger blueshift, as well as increase in the optical response.