Defects design in 2D materials via high-throughput calculation and machine learning
POSTER
Abstract
Employing high throughput DFT calculations, we study the crystal structure, stability, and electronic structures of defects in 2D materials such as hexagonal boron nitride and transition metal dichalcogenides. The interaction of defects was evaluated by comparing the formation energies of defect complexes and individual defects. A mean-field theory model was constructed to understand the interaction dynamics of defects. Machine learning models were trained to predict the stability and electronic properties of defects.
Presenters
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Pengru Huang
Institute for Functional Intelligent Materials, National University of Singapore
Authors
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Pengru Huang
Institute for Functional Intelligent Materials, National University of Singapore
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Miguel Dias Costa
National University of Singapore
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Ruslan Lukin
Innopolis University
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Nikita Kazeev
HSE University
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Andrey Ustyuzhanin
HSE University
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Alexander Tormasov
Innopolis university
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Antonio Castro Neto
National University of Singapore
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Kostya Novoselov
Institute for Functional Intelligent Materials, National University of Singapore, National University of Singapore