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Defects design in 2D materials via high-throughput calculation and machine learning

POSTER

Abstract

Employing high throughput DFT calculations, we study the crystal structure, stability, and electronic structures of defects in 2D materials such as hexagonal boron nitride and transition metal dichalcogenides. The interaction of defects was evaluated by comparing the formation energies of defect complexes and individual defects. A mean-field theory model was constructed to understand the interaction dynamics of defects. Machine learning models were trained to predict the stability and electronic properties of defects.

Presenters

  • Pengru Huang

    Institute for Functional Intelligent Materials, National University of Singapore

Authors

  • Pengru Huang

    Institute for Functional Intelligent Materials, National University of Singapore

  • Miguel Dias Costa

    National University of Singapore

  • Ruslan Lukin

    Innopolis University

  • Nikita Kazeev

    HSE University

  • Andrey Ustyuzhanin

    HSE University

  • Alexander Tormasov

    Innopolis university

  • Antonio Castro Neto

    National University of Singapore

  • Kostya Novoselov

    Institute for Functional Intelligent Materials, National University of Singapore, National University of Singapore