Monte Carlo Simulation of Carrier Transport

The semiclassical Monte Carlo method for charge transport simulation is a powerful tool to bridge the gap between abstract models and materials. Close correspondence of this model to processes occurring in the motion of the particle makes this method both intuitive to understand and tailorable to a specific problem. Despite simplicity of understanding, this method allows for sophisticated models, allowing, for example, the simulation of analytical band structures, or the inclusion of complex scattering mechanisms. The complexity of the model may be tailored to examine specific problems such as the effect of band warping on transport properties. Such simulations allow for the calculation of transport properties such as the average electron energy, drift velocity, mobility, diffusion coefficient, conductivity, Seebeck coefficient and electronic thermal conductivity for various materials. In light of this, we have created a prototype of a Monte Carlo simulation of electron transport in Arsenic doped Silicon under the influence of an electric field using Mathematica. I will discuss the current and future stages of this project.