Effects of Ga doping on the phase transitions of V₂O₃

V₂O₃ undergoes a first-order metal-insulator transition accompanied by magnetostructural transition (T_MI~160 K). Here, we report a comprehensive study on a gallium doped (4%) polycrystalline V₂O₃ by employing a variety of experimental techniques such as synchrotron X-ray diffraction, time of flight neutron diffraction, electrical transport, DC magnetization, heat capacity, thermal expansion, and Raman spectroscopy. Remarkably, the gallium doping in V₂O₃ enhances the Neel temperature by 25 K (T_N = 185 K). Further, we find the decoupling of structural transition from the magnetic transition and a second order insulator - insulator transition (T_II ~ 185 K) occurs without a sudden jump. Raman spectroscopic studies reveal the softening of E_g mode and the splitting of A_1g mode, due to lifting of degeneracy, in the rhombohedral phase (R-3c) occur at slightly above T_N/T_II (T* = 195 K)_. Besides, the rhombohedral and monoclinic phases coexist in a broad temperature range and a complete phase transformation to monoclinic phase occurs at 127 K.