Voltage-controlled brightness of localized emitter arrays in monolayer WSe₂

Transition-metal dichalcogenides (TMDC) monolayers are promising systems for optoelectronic devices due to their strong photoluminescence (PL), direct band gaps, large exciton binding energies, and favorable mechanical property for strain engineering. Herein, we report the electrostatic control of localized strain, and large exciton binding energy compared to RT. In this work, we demonstrate localized exciton emitter arrays in monolayer WSe₂ dry-transferred. We demonstrate localized bright WSe₂ emitter arrays on SiO₂ nanopillars. The nanopillars generate, where a localized biaxial strain up to 0.6 % on WSe₂. The resulting electronic band structure changes funnelis introduced to WSe₂. We observe charge and exciton funneling to the pillar strain apex. A surprising, resulting in a significant enhancement in PL emission is either due to increased radiative or decreased nonradiative rates. We explore the mechanisms of PLexcitonic emission intensity variation by studying its. We find evidence the strain-related confinement potential promotes the radiative and nonradiative decayprocess. We deploy electrostatic doping to further promote the excitonic emission intensities. We attribute the enhancement to the suppression of trion emission and non-radiative channels, including charge control to investigate the trion decay channel and power dependence study to like exciton-exciton annihilation, and density dependence possibly causing enhanced PL via exciton to electron-hole pair transition from screening.. Our work is importantpaves the way for strain-engineered optoelectronics and has asheds insight on the potential application in large -scale light-emitting devices using 2D materials.